Globig, J. E. (2015, June), A Practical Approach to Designing MOSFET Amplifiers for a Specific Gain  Paper presented at 2015 ASEE Annual Conference & Exposition, Seattle, Washington. 10.18260/p.23425

\bibitem{asee_peer_23425}
  Globig, J. E. (2015, June), \emph{A Practical Approach to Designing MOSFET Amplifiers for a Specific Gain}
  Paper presented at 2015 ASEE Annual Conference \& Exposition, Seattle, Washington.
  10.18260/p.23425

James E. Globig.  "A Practical Approach to Designing MOSFET Amplifiers for a Specific Gain".  2015 ASEE Annual Conference & Exposition, Seattle, Washington, 2015, June.  ASEE Conferences, 2015.  https://strategy.asee.org/23425 Internet.  14 May, 2024

\bibitem{asee_peer_23425}
  James E. Globig.
  "A Practical Approach to Designing MOSFET Amplifiers for a Specific Gain".
  \emph{2015 ASEE Annual Conference \& Exposition, Seattle, Washington, 2015, June}.
  ASEE Conferences, 2015.
  https://strategy.asee.org/23425 Internet.  14 May, 2024

@INPROCEEDINGS{asee_peer_23425
author = "James E. Globig"
title = "A Practical Approach to Designing MOSFET Amplifiers for a Specific Gain"
booktitle = "2015 ASEE Annual Conference \& Exposition"
year = "2015"
month = "June"
address = "Seattle, Washington"
publisher = "ASEE Conferences"
note = {https://strategy.asee.org/23425}
number = {10.18260/p.23425}
}

TY  - CPAPER
AB  -                                    A Practical Approach                           to Designing MOSFET Amplifiers                                     for a Specific GainMetal Oxide Semiconductor Field Effect Transistors (MOSFETs) are primarily recognized fortheir use as a solid state switch. They are often overlooked as amplifiers because, despite severaladvantages over Bipolar Junction Transistors (BJTs), they are seen as devices that can onlydeliver single digit voltage gains. Even though calculating the gain for a MOSFET amplifierdesign is a well understood exercise, designing a MOSFET amplifier for a specified, moderatelyhigh gain at the outset is not. This is because the gain parameter of a MOSFET, itstransconductance, is both a function of, and interacts with, its bias point. This paper reinforcesthe Problem Definition, Paper Design, Validation, and Verification engineering process with astep-by-step method to design a modern MOSFET amplifier to a specific, moderately highvoltage gain. Instead of the “design the amplifier, analyze it to determine its gain, and modify”iterative process, this approach greatly reduces the empirical nature of the typical FET Amplifierdesign process taught in text books by introducing the engineering student to a comprehensiblemethod to approximate the desired voltage gain on the first iteration.
AU  - James E. Globig
CY  - Seattle, Washington
DA  - 2015/06/14
PB  - ASEE Conferences
TI  - A Practical Approach to Designing MOSFET Amplifiers for a Specific Gain
UR  - https://strategy.asee.org/23425
DO  - 10.18260/p.23425
ER  -